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Infineon Technologies. Part Number. SGB06N60. Description. Fast IGBT in NPT-technology.Avalanche energy, single pulse. IC 6 a, VCC 50 V, rge 25 , start at Tj 25C. Short circuit withstand time1). VGE 15V, VCC 600V, Tj 150C. Abstract: G15N60 SGB15N60HS High Speed IGBT in NPT-technology C 30 lower Eoff compared to previous , collector current IC SGB15N60HS Maximum Ratings Unit 600 V A TC 25C 27 TC 100 , 2.3 Oct 06 SGB15N60HS Thermal Resistance Parameter Symbol Conditions Max. SGB15N60HS. Thermal Resistance. Parameter.SGB15N60HS. Switching Characteristic, Inductive Load, at Tj25 C. Parameter. 15. General characteristics of D-type relay modules. Users manual and Technical description.SGB/6 Selection of a latching feature for the tripping signal TS2 for overcurrent faults. [eng] Onew Cut SGB Ep.

[Eng Subs] Star Golden Bell EP 177 Yuri, Yoona, Tiffany, SooYoung [03.22.08] Part 1/ 6 - Duration: 15:01. linachieng 615,045 views. SGB15N120. Fast IGBT in NPT-technology. 40 lower Eoff compared to previous generation Short circuit withstand time 10 s Designed forSGB15N120. Thermal Resistance. Parameter. SGB15N60 Transistor Datasheet, SGB15N60 Equivalent, PDF Data Sheets. IGBT.

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